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this is information on a product in full production. october 2014 docid024419 rev 3 1/15 15 STF8N80K5, stfi8n80k5 n-channel 800 v, 0.8 ? typ., 6 a mdmesh? k5 power mosfet in to-220fp and i 2 pakfp packages datasheet ? production data figure 1. internal schematic diagram features ? industry?s lowest r ds(on) x area ? industry?s best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these very high voltage n-channel power mosfets are designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. d(2) g(1) s(3) am01476v1 1 2 3 to-220fp i 2 pakfp (to-281) 1 2 3 order codes v ds r ds(on) max. i d p tot STF8N80K5 800 v 0.95 6 a 25 w stfi8n80k5 table 1. device summary order codes marking package packaging STF8N80K5 8n80k5 to-220fp tube stfi8n80k5 i 2 pakfp (to-281) www.st.com
contents STF8N80K5, stfi8n80k5 2/15 docid024419 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid024419 rev 3 3/15 STF8N80K5, stfi8n80k5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 30 v i d drain current t c = 25 c 6 (1) 1. limited by package. a i d drain current t c = 100 c 4 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 24 (1) a p tot total dissipation at t c = 25 c 25 w i ar (3) 3. pulse width limited by t jmax. max current during repetitive or single pulse avalanche 2a e as (4) 4. starting t j = 25 c, i d =i as , v dd = 50 v single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 114 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (5) 5. i sd 6 a, di/dt 100 a/s, v ds(peak) v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (6) 6. v ds 640 v mosfet dv/dt ruggedness 50 v/ns t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max. 5 c/w r thj-amb thermal resistance junction-amb max. 62.5 c/w
electrical characteristics STF8N80K5, stfi8n80k5 4/15 docid024419 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v, 1 a v ds = 800 v, tc=125 c 50 a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 3 a 0.8 0.95 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -450- pf c oss output capacitance - 50 - pf c rss reverse transfer capacitance -1-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 640 v -57-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -24-pf r g intrinsic gate resistance f = 1 mhz open drain - 6 - q g total gate charge v dd = 640 v, i d = 6 a v gs =10 v (see figure 16 ) - 16.5 - nc q gs gate-source charge - 3.2 - nc q gd gate-drain charge - 11 - nc
docid024419 rev 3 5/15 STF8N80K5, stfi8n80k5 electrical characteristics the built-in back-to-back zener diodes have been specifically designed to enhance the esd capability of the device. the zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. these integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 3 a, r g =4.7 , v gs =10 v (see figure 18 ) -12-ns t r rise time 14 - ns t d(off) turn-off delay time 32 - ns t f fall time 20 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 6 a i sdm source-drain current (pulsed) 24 a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 6 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 6 a, v dd = 60 v di/dt = 100 a/s, (see figure 17 ) - 300 ns q rr reverse recovery charge 3 c i rrm reverse recovery current 20 a t rr reverse recovery time i sd = 6 a, v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 17 ) - 415 ns q rr reverse recovery charge - 3.8 c i rrm reverse recovery current - 18 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics STF8N80K5, stfi8n80k5 6/15 docid024419 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15631v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 12 8 4 0 0 8 v ds (v) 16 (a) 4 12 6v v gs =10, 11v 2 6 10 7v 8v 9v am15633v1 i d 12 8 4 0 5 7 v gs (v) 9 (a) 6 8 10 2 6 10 v ds =20v am15634v1 v gs 6 4 2 0 0 4 q g (nc) (v) 16 8 8 12 10 12 300 200 100 0 400 500 v ds v ds (v) 600 v dd =640v i d =6a am15635v1 r ds(on) 0.8 0.6 0.4 06 i d (a) () 48 1.0 v gs =10v 2 10 12 1.2 am15636v1
docid024419 rev 3 7/15 STF8N80K5, stfi8n80k5 electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on-resistance vs. temperature figure 12. drain-source diode forward characteristics figure 13. normalized v ds vs. temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am15637v1 e oss 6 4 2 0 0 v ds (v) (j) 400 200 600 am15638v1 v gs(th) 1 0.8 0.6 0.4 -50 0 t j (c) (norm) 50 100 i d =100a v ds =v gs am15639v1 r ds(on) 2 1.2 0.4 -50 0 t j (c) (norm) 50 100 0.8 1.6 v gs =10v i d =3 a 2.4 am15640v1 v sd 1 3 i sd (a) (v) 2 4 5 0.5 0.6 0.7 0.8 0.9 t j =-50c t j =150c t j =25c am15641v1 v ds -50 0 t j (c) (norm) 50 100 0.9 0.94 0.98 1.02 1.06 1.1 i d = 1ma am15642v1
electrical characteristics STF8N80K5, stfi8n80k5 8/15 docid024419 rev 3 figure 14. maximum avalanche energy vs. starting t j e as 0 40 t j (c) (mj) 80 0 20 40 120 60 80 100 v dd =50v i d =2a am15643v1
docid024419 rev 3 9/15 STF8N80K5, stfi8n80k5 test circuits 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STF8N80K5, stfi8n80k5 10/15 docid024419 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024419 rev 3 11/15 STF8N80K5, stfi8n80k5 package mechanical data figure 21. to-220fp drawing 7012510_rev_k_b
package mechanical data STF8N80K5, stfi8n80k5 12/15 docid024419 rev 3 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid024419 rev 3 13/15 STF8N80K5, stfi8n80k5 package mechanical data figure 22. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 uhy$
revision history STF8N80K5, stfi8n80k5 14/15 docid024419 rev 3 5 revision history table 11. document revision history date revision changes 25-mar-2012 1 first release. part numbers previously included in datasheet dm00062075 27-mar-2013 2 added: mosfet dv/dt ruggedness on table 2 28-oct-2014 3 updated title with ?mdmesh? k5? nomenclature document status promoted from preliminary data to production data updated cover page features list updated cover page description updated zener diode descriptions in section 2: electrical characteristics updated figure 7: static drain-source on-resistance reordered drawings and tables in section 4: package mechanical data
docid024419 rev 3 15/15 STF8N80K5, stfi8n80k5 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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